IPD70N10S312ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.0111Ohm

ECCN Code :

EAR99

Turn-Off Delay Time :

25 ns

Mount :

Surface Mount

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Power Dissipation-Max :

125W Tc

Avalanche Energy Rating (Eas) :

410 mJ

Vgs (Max) :

±20V

Published :

2006

Reference Standard :

AEC-Q101

JESD-30 Code :

R-PSSO-G2

Configuration :

SINGLE WITH BUILT-IN DIODE

Packaging :

Tape and Reel (TR)

Number of Terminations :

2

Mounting Type :

Surface Mount

Series :

OptiMOS™

Operating Temperature :

-55°C~175°C TJ

Current - Continuous Drain (Id) @ 25°C :

70A Tc

Rds On (Max) @ Id, Vgs :

11.1m Ω @ 70A, 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

280A

Terminal Finish :

Matte Tin (Sn)

Terminal Position :

Single

Number of Pins :

3

Case Connection :

DRAIN

Gate to Source Voltage (Vgs) :

20V

Reach Compliance Code :

not_compliant

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

70A

Gate Charge (Qg) (Max) @ Vgs :

65nC @ 10V

Transistor Element Material :

SILICON

Halogen Free :

Halogen Free

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

4V @ 83μA

Number of Elements :

1

Terminal Form :

Gull wing

Turn On Delay Time :

17 ns

Input Capacitance (Ciss) (Max) @ Vds :

4355pF @ 25V

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Lead Free :

Contains Lead

Max Dual Supply Voltage :

100V

Factory Lead Time :

14 Weeks

Rise Time :

8ns

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3