IPD70N04S307ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Product Status :

Active

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

40 nC @ 10 V

Supplier Device Package :

PG-TO252-3-11

Rds On (Max) @ Id, Vgs :

6mOhm @ 70A, 10V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Vgs(th) (Max) @ Id :

4V @ 50μA

Series :

OptiMOS?

FET Feature :

-

Power Dissipation (Max) :

79W (Tc)

Drain to Source Voltage (Vdss) :

40 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

82A (Tc)

Operating Temperature :

-55°C ~ 175°C (TJ)

Input Capacitance (Ciss) (Max) @ Vds :

2700 pF @ 25 V

Package :

Bulk

Mounting Type :

Surface Mount

FET Type :

N-Channel