IPD70N12S3L12ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Terminations :

2

Pbfree Code :

yes

Published :

2016

Terminal Form :

Gull wing

JEDEC-95 Code :

TO-252

Drain-source On Resistance-Max :

0.0152Ohm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Surface Mount :

yes

JESD-609 Code :

e3

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Reference Standard :

AEC-Q101

Operating Temperature (Min) :

-55°C

Factory Lead Time :

14 Weeks

Packaging :

Tape and Reel (TR)

DS Breakdown Voltage-Min :

120V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PSSO-G2

Polarity/Channel Type :

N-Channel

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Single

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Reach Compliance Code :

not_compliant

Number of Elements :

1

Drain Current-Max (Abs) (ID) :

70A

Terminal Finish :

Tin (Sn)

Pulsed Drain Current-Max (IDM) :

280A

Avalanche Energy Rating (Eas) :

410 mJ