IPD70R2K0CEAUMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2013

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Contains Lead

Mounting Type :

Surface Mount

Operating Temperature :

-40°C~150°C TJ

Terminal Finish :

Tin (Sn)

Case Connection :

DRAIN

Rds On (Max) @ Id, Vgs :

2 Ω @ 1A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

163pF @ 100V

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Form :

Gull wing

Avalanche Energy Rating (Eas) :

11 mJ

Pulsed Drain Current-Max (IDM) :

6.3A

JESD-609 Code :

e3

Series :

CoolMOS™

Terminal Position :

Single

Halogen Free :

Halogen Free

Mount :

Surface Mount

Factory Lead Time :

18 Weeks

Packaging :

Tape and Reel (TR)

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Number of Terminations :

2

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Reach Compliance Code :

not_compliant

Max Dual Supply Voltage :

700V

Power Dissipation-Max :

42W Tc

JESD-30 Code :

R-PSSO-G2

Drain-source On Resistance-Max :

2Ohm

Vgs(th) (Max) @ Id :

3.5V @ 70μA

Continuous Drain Current (ID) :

4A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Current - Continuous Drain (Id) @ 25°C :

4A Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Feature :

Super Junction

Gate Charge (Qg) (Max) @ Vgs :

7.8nC @ 10V