IPD70N10S3L12ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Power Dissipation-Max :

125W Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Series :

OptiMOS™

Avalanche Energy Rating (Eas) :

410 mJ

Fall Time (Typ) :

7 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

16V

Current - Continuous Drain (Id) @ 25°C :

70A Tc

Turn On Delay Time :

12 ns

Drain-source On Resistance-Max :

0.0152Ohm

Halogen Free :

Halogen Free

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Turn-Off Delay Time :

35 ns

Factory Lead Time :

14 Weeks

FET Type :

N-Channel

Terminal Finish :

Tin (Sn)

Vgs (Max) :

±20V

Reference Standard :

AEC-Q101

JESD-30 Code :

R-PSSO-G2

Operating Temperature :

-55°C~175°C TJ

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

11.5m Ω @ 70A, 10V

Rise Time :

6ns

Mount :

Surface Mount

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

5550pF @ 25V

Reach Compliance Code :

not_compliant

Pulsed Drain Current-Max (IDM) :

280A

Number of Terminations :

2

Max Dual Supply Voltage :

100V

Continuous Drain Current (ID) :

70A

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Number of Elements :

1

Lead Free :

Contains Lead

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Case Connection :

DRAIN

ECCN Code :

EAR99

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

77nC @ 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Position :

Single

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

2.4V @ 83μA

Number of Pins :

3

Published :

2011