IPD70N04S3-07

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Mfr.Part #
IPD70N04S3-07
Manufacturer
Infineon Technologies
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 40V 82A TO252-3
Stock
17,142
In Stock :
17,142

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Surface Mount :
yes
Current - Continuous Drain (Id) @ 25°C :
82A Tc
ECCN Code :
EAR99
Halogen Free :
Halogen Free
Transistor Element Material :
SILICON
Drain-source On Resistance-Max :
0.006Ohm
Case Connection :
DRAIN
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Number of Terminations :
2
Drain Current-Max (Abs) (ID) :
70A
Pbfree Code :
No
Turn On Delay Time :
13 ns
Series :
OptiMOS™
JESD-30 Code :
R-PSSO-G2
RoHS Status :
RoHS Compliant
Avalanche Energy Rating (Eas) :
145 mJ
Length :
6.5mm
Gate Charge (Qg) (Max) @ Vgs :
40nC @ 10V
Rise Time :
8ns
Width :
6.22mm
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Gate to Source Voltage (Vgs) :
20V
Terminal Form :
Gull wing
Height :
2.3mm
Turn-Off Delay Time :
17 ns
Lead Free :
Lead Free
Operating Mode :
ENHANCEMENT MODE
Published :
2007
JESD-609 Code :
e3
Drain to Source Breakdown Voltage :
40V
Mounting Type :
Surface Mount
Vgs (Max) :
±20V
Additional Feature :
ULTRA LOW RESISTANCE
Power Dissipation :
79W
Packaging :
Tape and Reel (TR)
FET Type :
N-Channel
Continuous Drain Current (ID) :
82A
Number of Pins :
3
Operating Temperature :
-55°C~175°C TJ
Rds On (Max) @ Id, Vgs :
6m Ω @ 70A, 10V
Number of Elements :
1
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Max Dual Supply Voltage :
40V
Power Dissipation-Max :
79W Tc
Pulsed Drain Current-Max (IDM) :
280A
Terminal Finish :
Matte Tin (Sn)
Element Configuration :
Single
Input Capacitance (Ciss) (Max) @ Vds :
2700pF @ 25V
HTS Code :
8541.29.00.95
Fall Time (Typ) :
7 ns
Qualification Status :
Not Qualified
Pin Count :
4
Drive Voltage (Max Rds On,Min Rds On) :
10V
Vgs(th) (Max) @ Id :
4V @ 50μA
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Datasheets
IPD70N04S3-07
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IPD70N04S3-07 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:2, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type:Surface Mount, Number of Pins:3, Operating Temperature:-55°C~175°C TJ, IPD70N04S3-07 pinout, IPD70N04S3-07 datasheet PDF, IPD70N04S3-07 amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IPD70N04S3-07 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IPD70N04S3-07


N-Channel Tape & Reel (TR) 6m Ω @ 70A, 10V ±20V 2700pF @ 25V 40nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63

IPD70N04S3-07 Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 145 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 2700pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 82A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 40V, and this device has a drainage-to-source breakdown voltage of 40VV.Drain current refers to the maximum continuous current a device can conduct, and it is 70A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 17 ns.Peak drain current is 280A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 13 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In addition to 40V, it supports dual voltages up to the maximum.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IPD70N04S3-07 Features


the avalanche energy rating (Eas) is 145 mJ
a continuous drain current (ID) of 82A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 17 ns
based on its rated peak drain current 280A.


IPD70N04S3-07 Applications


There are a lot of Infineon Technologies
IPD70N04S3-07 applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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