IPD70R950CEAUMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Factory Lead Time :

18 Weeks

Lead Free :

Contains Lead

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Max Dual Supply Voltage :

700V

Avalanche Energy Rating (Eas) :

50 mJ

Rds On (Max) @ Id, Vgs :

950m Ω @ 1.5A, 10V

Case Connection :

DRAIN

Transistor Element Material :

SILICON

Power Dissipation-Max :

68W Tc

Terminal Finish :

Tin (Sn)

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

Input Capacitance (Ciss) (Max) @ Vds :

328pF @ 100V

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

7.4A Tc

Transistor Application :

SWITCHING

Number of Elements :

1

Series :

CoolMOS™

Number of Terminations :

2

Vgs(th) (Max) @ Id :

3.5V @ 150μA

Gate Charge (Qg) (Max) @ Vgs :

15.3nC @ 10V

Pulsed Drain Current-Max (IDM) :

12A

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Reach Compliance Code :

not_compliant

Continuous Drain Current (ID) :

7.4A

ECCN Code :

EAR99

Terminal Position :

Single

JESD-30 Code :

R-PSSO-G2

FET Type :

N-Channel

Pbfree Code :

yes

Vgs (Max) :

±20V

Halogen Free :

Halogen Free

Drain-source On Resistance-Max :

0.95Ohm

Operating Temperature :

-40°C~150°C TJ

JESD-609 Code :

e3

Published :

2013

Packaging :

Tape and Reel (TR)

FET Feature :

Super Junction

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mount :

Surface Mount