IPD380P06NMATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Operating Temperature :

-55°C~175°C TJ

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

4V @ 1.7mA

JESD-30 Code :

R-PSSO-G2

Input Capacitance (Ciss) (Max) @ Vds :

2500pF @ 30V

Drain Current-Max (Abs) (ID) :

35A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Single

Terminal Form :

Gull wing

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

63nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Case Connection :

DRAIN

Rds On (Max) @ Id, Vgs :

38m Ω @ 35A, 10V

Pulsed Drain Current-Max (IDM) :

140A

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Series :

OptiMOS™

Drain to Source Voltage (Vdss) :

60V

FET Type :

P-Channel

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Factory Lead Time :

18 Weeks

Operating Mode :

ENHANCEMENT MODE

Surface Mount :

yes

Current - Continuous Drain (Id) @ 25°C :

35A Tc

Avalanche Energy Rating (Eas) :

559 mJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Elements :

1

Number of Terminations :

2

Mounting Type :

Surface Mount

Drain-source On Resistance-Max :

0.038Ohm

DS Breakdown Voltage-Min :

60V

Power Dissipation-Max :

125W Tc