IPD30N03S2L07ATMA1
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- Mfr.Part #
- IPD30N03S2L07ATMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 30A TO252-3
- Stock
- 10,517
- In Stock ：
- 10,517
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain-source On Resistance-Max :
- 0.0098Ohm
- Rise Time :
- 30ns
- Gate Charge (Qg) (Max) @ Vgs :
- 68nC @ 10V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Operating Temperature :
- -55°C~175°C TJ
- Transistor Element Material :
- SILICON
- JESD-30 Code :
- R-PSSO-G2
- Current - Continuous Drain (Id) @ 25°C :
- 30A Tc
- ECCN Code :
- EAR99
- Vgs (Max) :
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1900pF @ 25V
- Operating Mode :
- ENHANCEMENT MODE
- Published :
- 2006
- Continuous Drain Current (ID) :
- 30A
- Terminal Position :
- Single
- Gate to Source Voltage (Vgs) :
- 20V
- FET Type :
- N-Channel
- Reference Standard :
- AEC-Q101
- Avalanche Energy Rating (Eas) :
- 250 mJ
- Drain to Source Voltage (Vdss) :
- 30V
- Number of Terminations :
- 2
- RoHS Status :
- RoHS Compliant
- Case Connection :
- DRAIN
- Vgs(th) (Max) @ Id :
- 2V @ 85µA
- Power Dissipation-Max :
- 136W Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Terminal Form :
- Gull wing
- Turn On Delay Time :
- 10 ns
- Fall Time (Typ) :
- 16 ns
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Mount :
- Surface Mount
- Mounting Type :
- Surface Mount
- Pulsed Drain Current-Max (IDM) :
- 120A
- Additional Feature :
- ULTRA LOW RESISTANCE
- Turn-Off Delay Time :
- 40 ns
- Number of Pins :
- 3
- Series :
- OptiMOS™
- Rds On (Max) @ Id, Vgs :
- 6.7m Ω @ 30A, 10V
- Number of Elements :
- 1
- Packaging :
- Tape and Reel (TR)
- Datasheets
- IPD30N03S2L07ATMA1
N-Channel Tape & Reel (TR) 6.7m Ω @ 30A, 10V ±20V 1900pF @ 25V 68nC @ 10V 30V TO-252-3, DPak (2 Leads + Tab), SC-63
IPD30N03S2L07ATMA1 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 250 mJ.A device's maximum input capacitance is 1900pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 30A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 40 ns.Its maximum pulsed drain current is 120A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you need to apply a 30V drain to source voltage (Vdss).This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.
IPD30N03S2L07ATMA1 Features
the avalanche energy rating (Eas) is 250 mJ
a continuous drain current (ID) of 30A
the turn-off delay time is 40 ns
based on its rated peak drain current 120A.
a 30V drain to source voltage (Vdss)
IPD30N03S2L07ATMA1 Applications
There are a lot of Infineon Technologies
IPD30N03S2L07ATMA1 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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