IPD30N03S2L20ATMA1
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- Mfr.Part #
- IPD30N03S2L20ATMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 30A TO252-31
- Stock
- 34,499
- In Stock ：
- 34,499
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Series :
- OptiMOS™
- Factory Lead Time :
- 10 Weeks
- ECCN Code :
- EAR99
- Transistor Application :
- SWITCHING
- Lead Free :
- Contains Lead
- Number of Elements :
- 1
- Operating Mode :
- ENHANCEMENT MODE
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- Max Dual Supply Voltage :
- 30V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Terminal Finish :
- Tin (Sn)
- Continuous Drain Current (ID) :
- 30A
- Power Dissipation-Max :
- 60W Tc
- Case Connection :
- DRAIN
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Fall Time (Typ) :
- 10 ns
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- Terminal Form :
- Gull wing
- Avalanche Energy Rating (Eas) :
- 70 mJ
- Gate Charge (Qg) (Max) @ Vgs :
- 19nC @ 10V
- Rise Time :
- 15ns
- Terminal Position :
- Single
- Rds On (Max) @ Id, Vgs :
- 20m Ω @ 18A, 10V
- Published :
- 2004
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Mount :
- Surface Mount
- Halogen Free :
- Halogen Free
- Number of Terminations :
- 2
- Input Capacitance (Ciss) (Max) @ Vds :
- 530pF @ 25V
- Turn On Delay Time :
- 5 ns
- Turn-Off Delay Time :
- 19 ns
- Power Dissipation :
- 60W
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- RoHS Status :
- ROHS3 Compliant
- Vgs(th) (Max) @ Id :
- 2V @ 23μA
- Current - Continuous Drain (Id) @ 25°C :
- 30A Tc
- JESD-30 Code :
- R-PSSO-G2
- Vgs (Max) :
- ±20V
- Reach Compliance Code :
- not_compliant
- JESD-609 Code :
- e3
- Operating Temperature :
- -55°C~175°C TJ
- Gate to Source Voltage (Vgs) :
- 20V
- Transistor Element Material :
- SILICON
- FET Type :
- N-Channel
- Datasheets
- IPD30N03S2L20ATMA1
N-Channel Tape & Reel (TR) 20m Ω @ 18A, 10V ±20V 530pF @ 25V 19nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
IPD30N03S2L20ATMA1 Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 70 mJ.The maximum input capacitance of this device is 530pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 30A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 19 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 5 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.With its 30V power supply, it is capable of handling a dual voltage maximum.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.
IPD30N03S2L20ATMA1 Features
the avalanche energy rating (Eas) is 70 mJ
a continuous drain current (ID) of 30A
the turn-off delay time is 19 ns
IPD30N03S2L20ATMA1 Applications
There are a lot of Infineon Technologies
IPD30N03S2L20ATMA1 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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