IPD30N06S215ATMA2

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~175°C TJ

Number of Elements :

1

Drain-source On Resistance-Max :

0.0147Ohm

Vgs(th) (Max) @ Id :

4V @ 80μA

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

30A

Vgs (Max) :

±20V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-30 Code :

R-PSSO-G2

Terminal Position :

Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation-Max :

136W Tc

FET Type :

N-Channel

Reference Standard :

AEC-Q101

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Case Connection :

DRAIN

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Lead Free :

Contains Lead

Drive Voltage (Max Rds On,Min Rds On) :

10V

Factory Lead Time :

10 Weeks

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Pulsed Drain Current-Max (IDM) :

120A

Avalanche Energy Rating (Eas) :

240 mJ

Series :

OptiMOS™

Configuration :

SINGLE WITH BUILT-IN DIODE

Mount :

Surface Mount

Rds On (Max) @ Id, Vgs :

14.7m Ω @ 30A, 10V

Number of Pins :

3

Input Capacitance (Ciss) (Max) @ Vds :

1485pF @ 25V

Number of Terminations :

2

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

Max Dual Supply Voltage :

55V

Mounting Type :

Surface Mount

Published :

2006