IPD30N03S2L10ATMA1
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- Mfr.Part #
- IPD30N03S2L10ATMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 30A TO252-3
- Stock
- 11,154
- In Stock ：
- 11,154
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Published :
- 2006
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Contains Lead
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Case Connection :
- DRAIN
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 3
- Terminal Position :
- Single
- Vgs(th) (Max) @ Id :
- 2V @ 50μA
- Terminal Form :
- Gull wing
- Mounting Type :
- Surface Mount
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Drain-source On Resistance-Max :
- 0.0146Ohm
- ECCN Code :
- EAR99
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Vgs (Max) :
- ±20V
- Number of Elements :
- 1
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- Rds On (Max) @ Id, Vgs :
- 10m Ω @ 30A, 10V
- Operating Temperature :
- -55°C~175°C TJ
- Transistor Element Material :
- SILICON
- Current - Continuous Drain (Id) @ 25°C :
- 30A Tc
- JESD-30 Code :
- R-PSSO-G2
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Continuous Drain Current (ID) :
- 30A
- Transistor Application :
- SWITCHING
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Input Capacitance (Ciss) (Max) @ Vds :
- 1200pF @ 25V
- Max Dual Supply Voltage :
- 30V
- Fall Time (Typ) :
- 10 ns
- Turn-Off Delay Time :
- 29 ns
- Series :
- OptiMOS™
- Avalanche Energy Rating (Eas) :
- 150 mJ
- Gate Charge (Qg) (Max) @ Vgs :
- 42nC @ 10V
- Power Dissipation-Max :
- 100W Tc
- Number of Terminations :
- 2
- Terminal Finish :
- Tin (Sn)
- Turn On Delay Time :
- 7 ns
- Factory Lead Time :
- 10 Weeks
- Packaging :
- Tape and Reel (TR)
- Gate to Source Voltage (Vgs) :
- 20V
- Rise Time :
- 21ns
- Mount :
- Surface Mount
- FET Type :
- N-Channel
- Halogen Free :
- Halogen Free
- Pulsed Drain Current-Max (IDM) :
- 120A
- Reach Compliance Code :
- not_compliant
- Operating Mode :
- ENHANCEMENT MODE
- JESD-609 Code :
- e3
- Datasheets
- IPD30N03S2L10ATMA1
N-Channel Tape & Reel (TR) 10m Ω @ 30A, 10V ±20V 1200pF @ 25V 42nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
IPD30N03S2L10ATMA1 Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 150 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1200pF @ 25V.This device conducts a continuous drain current (ID) of 30A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 29 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 120A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 7 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.With 30V power, it supports a dual voltage supply of up to maximum.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).
IPD30N03S2L10ATMA1 Features
the avalanche energy rating (Eas) is 150 mJ
a continuous drain current (ID) of 30A
the turn-off delay time is 29 ns
based on its rated peak drain current 120A.
IPD30N03S2L10ATMA1 Applications
There are a lot of Infineon Technologies
IPD30N03S2L10ATMA1 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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