IPD30N06S2-15

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

2

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Terminal Form :

Gull wing

Terminal Finish :

Matte Tin (Sn)

Pin Count :

4

Packaging :

Tape and Reel (TR)

Configuration :

SINGLE WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

14.7m Ω @ 30A, 10V

Vgs(th) (Max) @ Id :

4V @ 80μA

Drain-source On Resistance-Max :

0.0147Ohm

Drain Current-Max (Abs) (ID) :

30A

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Type :

N-Channel

Vgs (Max) :

±20V

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

1485pF @ 25V

Qualification Status :

Not Qualified

Terminal Position :

Single

Series :

OptiMOS™

Mounting Type :

Surface Mount

DS Breakdown Voltage-Min :

55V

Drain to Source Voltage (Vdss) :

55V

Power Dissipation-Max :

136W Tc

Operating Temperature :

-55°C~175°C TJ

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Avalanche Energy Rating (Eas) :

240 mJ

JESD-30 Code :

R-PSSO-G2

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Case Connection :

DRAIN

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Pulsed Drain Current-Max (IDM) :

120A

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2006

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Surface Mount :

yes