IPD30N03S4L09ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Mount :

Surface Mount

Turn On Delay Time :

3 ns

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Power Dissipation-Max :

42W Tc

Halogen Free :

Halogen Free

Reference Standard :

AEC-Q101

Published :

2011

Number of Terminations :

2

Terminal Finish :

Tin (Sn)

Factory Lead Time :

12 Weeks

Operating Temperature :

-55°C~175°C TJ

Avalanche Energy Rating (Eas) :

28 mJ

Rise Time :

1ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Pins :

3

ECCN Code :

EAR99

Continuous Drain Current (ID) :

30A

Max Dual Supply Voltage :

30V

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

16V

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

5 ns

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Case Connection :

DRAIN

Drain-source On Resistance-Max :

0.009Ohm

Input Capacitance (Ciss) (Max) @ Vds :

1520pF @ 15V

Series :

OptiMOS™

Terminal Position :

Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

Reach Compliance Code :

not_compliant

Rds On (Max) @ Id, Vgs :

9m Ω @ 30A, 10V

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

2.2V @ 13μA

Pulsed Drain Current-Max (IDM) :

120A

JESD-30 Code :

R-PSSO-G2

Vgs (Max) :

±16V

Turn-Off Delay Time :

12 ns

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Lead Free :

Contains Lead

RoHS Status :

ROHS3 Compliant