IPD35N12S3L24ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

35A Tc

Avalanche Energy Rating (Eas) :

175 mJ

Number of Terminations :

2

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Reach Compliance Code :

not_compliant

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

FET Type :

N-Channel

Drain to Source Voltage (Vdss) :

120V

Published :

2017

Operating Temperature :

-55°C~175°C TJ

Vgs(th) (Max) @ Id :

2.4V @ 39μA

Surface Mount :

yes

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

2700pF @ 25V

Rds On (Max) @ Id, Vgs :

24m Ω @ 35A, 10V

DS Breakdown Voltage-Min :

120V

Number of Elements :

1

Drain Current-Max (Abs) (ID) :

35A

Case Connection :

DRAIN

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

140A

Terminal Position :

Single

Drain-source On Resistance-Max :

0.032Ohm

Factory Lead Time :

12 Weeks

Series :

OptiMOS™

JESD-30 Code :

R-PSSO-G2

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max :

71W Tc

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Terminal Finish :

Tin (Sn)

Packaging :

Tape and Reel (TR)

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

39nC @ 10V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Reference Standard :

AEC-Q101

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

NOT SPECIFIED