IPD350N06LGBTMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Current Rating :

29A

Published :

2008

Continuous Drain Current (ID) :

29A

JESD-609 Code :

e3

Voltage - Rated DC :

60V

Transistor Element Material :

SILICON

Mount :

Surface Mount

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation-Max :

68W Tc

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

2V @ 28μA

Rds On (Max) @ Id, Vgs :

35m Ω @ 29A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

800pF @ 30V

Terminal Finish :

Tin (Sn)

Additional Feature :

LOGIC LEVEL COMPATIBLE, AVALANCHE RATED

Factory Lead Time :

18 Weeks

Pin Count :

4

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Dual Supply Voltage :

60V

Current - Continuous Drain (Id) @ 25°C :

29A Tc

Avalanche Energy Rating (Eas) :

80 mJ

Packaging :

Tape and Reel (TR)

REACH SVHC :

No SVHC

Qualification Status :

Not Qualified

Threshold Voltage :

1.6V

Terminal Position :

Single

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Transistor Application :

SWITCHING

JESD-30 Code :

R-PSSO-G2

Halogen Free :

Not Halogen Free

Terminal Form :

Gull wing

Vgs (Max) :

±20V

Case Connection :

DRAIN

Number of Terminations :

2

Pbfree Code :

No

Reach Compliance Code :

not_compliant

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 5V

Series :

OptiMOS™

Operating Temperature :

-55°C~175°C TJ

FET Type :

N-Channel

Power Dissipation :

68W

JEDEC-95 Code :

TO-252AA

Number of Pins :

3

Lead Free :

Contains Lead