IPD33CN10NGBUMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

RoHS Compliant

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Rds On (Max) @ Id, Vgs :

33m Ω @ 27A, 10V

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

27A Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain-source On Resistance-Max :

0.033Ohm

Vgs (Max) :

±20V

Series :

OptiMOS™

Surface Mount :

yes

Terminal Form :

Gull wing

Power Dissipation-Max :

58W Tc

Gate Charge (Qg) (Max) @ Vgs :

24nC @ 10V

Mounting Type :

Surface Mount

Avalanche Energy Rating (Eas) :

47 mJ

Drain to Source Voltage (Vdss) :

100V

JEDEC-95 Code :

TO-252AA

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Reach Compliance Code :

Compliant

Number of Terminations :

2

Number of Elements :

1

Operating Temperature :

-55°C~175°C TJ

Terminal Position :

Single

DS Breakdown Voltage-Min :

100V

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Published :

2013

Case Connection :

DRAIN

Pbfree Code :

No

Vgs(th) (Max) @ Id :

4V @ 29μA

Pulsed Drain Current-Max (IDM) :

108A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pin Count :

3

Drain Current-Max (Abs) (ID) :

27A

JESD-30 Code :

R-PSSO-G2

Input Capacitance (Ciss) (Max) @ Vds :

1570pF @ 50V

Transistor Application :

SWITCHING

Qualification Status :

Not Qualified