IPD33CN10NGATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

33m Ω @ 27A, 10V

Operating Mode :

ENHANCEMENT MODE

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

N-Channel

JEDEC-95 Code :

TO-252AA

Rise Time :

21ns

Pbfree Code :

yes

Vgs (Max) :

±20V

Turn-Off Delay Time :

17 ns

Number of Pins :

3

Power Dissipation-Max :

58W Tc

Fall Time (Typ) :

4 ns

Operating Temperature :

-55°C~175°C TJ

Reach Compliance Code :

not_compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-30 Code :

R-PSSO-G2

Number of Elements :

1

Factory Lead Time :

18 Weeks

Pulsed Drain Current-Max (IDM) :

108A

Series :

OptiMOS™

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Lead Free :

Contains Lead

Current - Continuous Drain (Id) @ 25°C :

27A Tc

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mount :

Surface Mount

Terminal Finish :

Tin (Sn)

Number of Terminations :

2

Packaging :

Tape and Reel (TR)

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

24nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

4V @ 29μA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Avalanche Energy Rating (Eas) :

47 mJ

Terminal Position :

Single

Max Dual Supply Voltage :

100V

Input Capacitance (Ciss) (Max) @ Vds :

1570pF @ 50V

Continuous Drain Current (ID) :

27A

Published :

2007

Gate to Source Voltage (Vgs) :

20V

Mounting Type :

Surface Mount

Halogen Free :

Halogen Free

JESD-609 Code :

e3

Power Dissipation :

58W

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

Turn On Delay Time :

11 ns