IPD320N20N3GATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

4V @ 90µA

Series :

OptiMOS™

Number of Terminations :

2

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Continuous Drain Current (ID) :

34A

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

10V

Published :

2008

Power Dissipation-Max :

136W Tc

Operating Mode :

ENHANCEMENT MODE

Max Dual Supply Voltage :

200V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Number of Pins :

3

Case Connection :

DRAIN

Reach Compliance Code :

not_compliant

Factory Lead Time :

18 Weeks

Avalanche Energy Rating (Eas) :

190 mJ

Input Capacitance (Ciss) (Max) @ Vds :

2350pF @ 100V

Current - Continuous Drain (Id) @ 25°C :

34A Tc

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~175°C TJ

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Lead Free :

Contains Lead

Terminal Finish :

Tin (Sn)

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 10V

Terminal Position :

Single

JEDEC-95 Code :

TO-252AA

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs (Max) :

±20V

ECCN Code :

EAR99

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

32m Ω @ 34A, 10V

Number of Elements :

1

JESD-30 Code :

R-PSSO-G2

Mount :

Surface Mount

Terminal Form :

Gull wing

Halogen Free :

Halogen Free