IPD30N08S2L21ATMA1

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Mfr.Part #
IPD30N08S2L21ATMA1
Manufacturer
Infineon Technologies
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 75V 30A TO252-3
Stock
27,066
In Stock :
27,066

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Halogen Free :
Halogen Free
Max Dual Supply Voltage :
75V
Element Configuration :
Single
Number of Pins :
3
Published :
2006
RoHS Status :
ROHS3 Compliant
Operating Mode :
ENHANCEMENT MODE
Transistor Element Material :
SILICON
Operating Temperature :
-55°C~175°C TJ
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Continuous Drain Current (ID) :
30A
Fall Time (Typ) :
11 ns
Gate to Source Voltage (Vgs) :
20V
ECCN Code :
EAR99
Mounting Type :
Surface Mount
Terminal Finish :
Tin (Sn)
JESD-609 Code :
e3
Power Dissipation :
136W
Height :
2.41mm
Rise Time :
30ns
Number of Elements :
1
Case Connection :
DRAIN
Current - Continuous Drain (Id) @ 25°C :
30A Tc
Reference Standard :
AEC-Q101
Terminal Form :
Gull wing
Gate Charge (Qg) (Max) @ Vgs :
72nC @ 10V
Factory Lead Time :
10 Weeks
Additional Feature :
ULTRA-LOW RESISTANCE
Packaging :
Tape and Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds :
1650pF @ 25V
REACH SVHC :
No SVHC
Turn-Off Delay Time :
44 ns
Surface Mount :
yes
Number of Terminations :
2
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Series :
OptiMOS™
Avalanche Energy Rating (Eas) :
240 mJ
Vgs(th) (Max) @ Id :
2V @ 80μA
Rds On (Max) @ Id, Vgs :
20.5m Ω @ 25A, 10V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Vgs (Max) :
±20V
Width :
6.22mm
Turn On Delay Time :
9 ns
Drain to Source Breakdown Voltage :
75V
Length :
6.73mm
Drain-source On Resistance-Max :
0.026ohm
JESD-30 Code :
R-PSSO-G2
Reach Compliance Code :
not_compliant
Lead Free :
Lead Free
Power Dissipation-Max :
136W Tc
FET Type :
N-Channel
Pulsed Drain Current-Max (IDM) :
120A
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IPD30N08S2L21ATMA1 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Operating Temperature:-55°C~175°C TJ, Mounting Type:Surface Mount, Number of Terminations:2, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, IPD30N08S2L21ATMA1 pinout, IPD30N08S2L21ATMA1 datasheet PDF, IPD30N08S2L21ATMA1 amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IPD30N08S2L21ATMA1 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IPD30N08S2L21ATMA1


N-Channel Tape & Reel (TR) 20.5m Ω @ 25A, 10V ±20V 1650pF @ 25V 72nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63

IPD30N08S2L21ATMA1 Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 240 mJ.A device's maximal input capacitance is 1650pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 30A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 75V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 44 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 120A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 9 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.By using 75V, it can supply the maximum voltage from two sources.This device reduces its overall power consumption by using drive voltage (4.5V 10V).

IPD30N08S2L21ATMA1 Features


the avalanche energy rating (Eas) is 240 mJ
a continuous drain current (ID) of 30A
a drain-to-source breakdown voltage of 75V voltage
the turn-off delay time is 44 ns
based on its rated peak drain current 120A.


IPD30N08S2L21ATMA1 Applications


There are a lot of Infineon Technologies
IPD30N08S2L21ATMA1 applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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