IPD30N08S222ATMA1
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- Mfr.Part #
- IPD30N08S222ATMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 75V 30A TO252-3
- Stock
- 6,369
- In Stock ：
- 6,369
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Position :
- Single
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Vgs(th) (Max) @ Id :
- 4V @ 80μA
- Series :
- OptiMOS™
- Fall Time (Typ) :
- 20 ns
- FET Type :
- N-Channel
- Gate to Source Voltage (Vgs) :
- 20V
- Max Dual Supply Voltage :
- 75V
- Pulsed Drain Current-Max (IDM) :
- 120A
- Number of Pins :
- 3
- Published :
- 2006
- Terminal Finish :
- Tin (Sn)
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Number of Elements :
- 1
- Factory Lead Time :
- 10 Weeks
- Continuous Drain Current (ID) :
- 30A
- Power Dissipation-Max :
- 136W Tc
- Reach Compliance Code :
- not_compliant
- Case Connection :
- DRAIN
- Operating Temperature :
- -55°C~175°C TJ
- Mounting Type :
- Surface Mount
- JESD-30 Code :
- R-PSSO-G2
- Number of Terminations :
- 2
- Transistor Element Material :
- SILICON
- Packaging :
- Tape and Reel (TR)
- Operating Mode :
- ENHANCEMENT MODE
- Mount :
- Surface Mount
- Rise Time :
- 30ns
- Reference Standard :
- AEC-Q101
- Input Capacitance (Ciss) (Max) @ Vds :
- 1400pF @ 25V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Vgs (Max) :
- ±20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Halogen Free :
- Halogen Free
- Lead Free :
- Contains Lead
- Gate Charge (Qg) (Max) @ Vgs :
- 57nC @ 10V
- JESD-609 Code :
- e3
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Additional Feature :
- ULTRA LOW RESISTANCE
- Current - Continuous Drain (Id) @ 25°C :
- 30A Tc
- Terminal Form :
- Gull wing
- Rds On (Max) @ Id, Vgs :
- 21.5m Ω @ 50A, 10V
- Avalanche Energy Rating (Eas) :
- 240 mJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Drain-source On Resistance-Max :
- 0.0215Ohm
- Turn-Off Delay Time :
- 33 ns
- Turn On Delay Time :
- 13 ns
- Datasheets
- IPD30N08S222ATMA1
N-Channel Tape & Reel (TR) 21.5m Ω @ 50A, 10V ±20V 1400pF @ 25V 57nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
IPD30N08S222ATMA1 Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 240 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1400pF @ 25V.This device has a continuous drain current (ID) of [30A], which is its maximum continuous current.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 33 ns.A maximum pulsed drain current of 120A is the maximum peak drain current rated for this device.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 13 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Single MOSFETs transistor supports the maximum dual supply voltage when powered by 75V.Its overall power consumption can be reduced by using drive voltage (10V).
IPD30N08S222ATMA1 Features
the avalanche energy rating (Eas) is 240 mJ
a continuous drain current (ID) of 30A
the turn-off delay time is 33 ns
based on its rated peak drain current 120A.
IPD30N08S222ATMA1 Applications
There are a lot of Infineon Technologies
IPD30N08S222ATMA1 applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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