IPD30N06S4L23ATMA2

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

4 ns

Pulsed Drain Current-Max (IDM) :

120A

Rise Time :

1ns

Reach Compliance Code :

not_compliant

Operating Temperature :

-55°C~175°C TJ

Gate Charge (Qg) (Max) @ Vgs :

21nC @ 10V

Series :

Automotive, AEC-Q101, OptiMOS™

Height :

2.41mm

Continuous Drain Current (ID) :

30A

Power Dissipation-Max :

36W Tc

Terminal Form :

Gull wing

Max Dual Supply Voltage :

60V

Input Capacitance (Ciss) (Max) @ Vds :

1560pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Published :

2009

Mounting Type :

Surface Mount

Length :

6.73mm

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Fall Time (Typ) :

3 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

2.2V @ 10μA

Gate to Source Voltage (Vgs) :

16V

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

23m Ω @ 30A, 10V

Avalanche Energy Rating (Eas) :

18 mJ

Pbfree Code :

yes

Vgs (Max) :

±16V

Operating Mode :

ENHANCEMENT MODE

Mount :

Surface Mount

Turn-Off Delay Time :

15 ns

Number of Pins :

3

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Case Connection :

DRAIN

Element Configuration :

Single

Halogen Free :

Halogen Free

Factory Lead Time :

12 Weeks

Number of Terminations :

2

Width :

6.22mm

JESD-30 Code :

R-PSSO-G2

FET Type :

N-Channel