IPD30N06S4L23ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

36W Tc

Drain-source On Resistance-Max :

0.023Ohm

Mounting Type :

Surface Mount

JESD-30 Code :

R-PSSO-G2

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

ECCN Code :

EAR99

Terminal Position :

Single

Series :

OptiMOS™

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

Case Connection :

DRAIN

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

30A

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Terminations :

2

Operating Temperature :

-55°C~175°C TJ

Gate Charge (Qg) (Max) @ Vgs :

21nC @ 10V

Terminal Form :

Gull wing

Vgs(th) (Max) @ Id :

2.2V @ 10μA

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

23m Ω @ 30A, 10V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Configuration :

SINGLE WITH BUILT-IN DIODE

Avalanche Energy Rating (Eas) :

18 mJ

Vgs (Max) :

±16V

Published :

2009

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

1560pF @ 25V

DS Breakdown Voltage-Min :

60V

FET Type :

N-Channel

Surface Mount :

yes

Drain to Source Voltage (Vdss) :

60V

Pulsed Drain Current-Max (IDM) :

120A