IPD30N06S2L23ATMA3

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

2

Terminal Finish :

Tin (Sn)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PSSO-G2

Pulsed Drain Current-Max (IDM) :

120A

Avalanche Energy Rating (Eas) :

150 mJ

JESD-609 Code :

e3

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Rds On (Max) @ Id, Vgs :

23m Ω @ 22A, 10V

Published :

2006

Number of Pins :

3

Vgs(th) (Max) @ Id :

2V @ 50μA

Operating Mode :

ENHANCEMENT MODE

Pbfree Code :

yes

Vgs (Max) :

±20V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Lead Free :

Contains Lead

Factory Lead Time :

10 Weeks

Power Dissipation-Max :

100W Tc

Mount :

Surface Mount

Max Dual Supply Voltage :

55V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Gate Charge (Qg) (Max) @ Vgs :

42nC @ 10V

FET Type :

N-Channel

Series :

OptiMOS™

ECCN Code :

EAR99

Reference Standard :

AEC-Q101

Number of Elements :

1

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN DIODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Temperature :

-55°C~175°C TJ

Continuous Drain Current (ID) :

30A

Terminal Position :

Single

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

1091pF @ 25V

Mounting Type :

Surface Mount

Reach Compliance Code :

not_compliant

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)