IPD30N06S2L23ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

150 mJ

Published :

2006

RoHS Status :

ROHS3 Compliant

Additional Feature :

ULTRA LOW RESISTANCE

Mounting Type :

Surface Mount

Reference Standard :

AEC-Q101

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Case Connection :

DRAIN

Power Dissipation-Max :

100W Tc

Drain-source On Resistance-Max :

0.03Ohm

Vgs(th) (Max) @ Id :

2V @ 50μA

Terminal Form :

Gull wing

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Input Capacitance (Ciss) (Max) @ Vds :

1091pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Surface Mount :

yes

Vgs (Max) :

±20V

Number of Terminations :

2

JESD-30 Code :

R-PSSO-G2

Packaging :

Tape and Reel (TR)

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

23m Ω @ 22A, 10V

Drain Current-Max (Abs) (ID) :

30A

Drain to Source Voltage (Vdss) :

55V

Gate Charge (Qg) (Max) @ Vgs :

42nC @ 10V

FET Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

120A

DS Breakdown Voltage-Min :

55V

Operating Temperature :

-55°C~175°C TJ

Terminal Position :

Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Series :

OptiMOS™