IPD30N06S2L13ATMA4

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

1800pF @ 25V

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

200A

Published :

2006

Lead Free :

Contains Lead

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Avalanche Energy Rating (Eas) :

240 mJ

Reach Compliance Code :

not_compliant

Vgs(th) (Max) @ Id :

2V @ 80μA

Number of Pins :

3

JESD-30 Code :

R-PSSO-G2

Operating Temperature :

-55°C~175°C TJ

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Pbfree Code :

yes

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

69nC @ 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Terminations :

2

Drain-source On Resistance-Max :

0.017Ohm

Rds On (Max) @ Id, Vgs :

13m Ω @ 30A, 10V

Packaging :

Tape and Reel (TR)

Reference Standard :

AEC-Q101

Terminal Finish :

Tin (Sn)

FET Type :

N-Channel

Continuous Drain Current (ID) :

30A

Terminal Position :

Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Series :

OptiMOS™

JESD-609 Code :

e3

Factory Lead Time :

10 Weeks

Power Dissipation-Max :

136W Tc

Mounting Type :

Surface Mount

Max Dual Supply Voltage :

55V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63