IPD30N06S2L13ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

55 V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

1800 pF @ 25 V

Terminal Form :

Gull wing

JEDEC-95 Code :

TO-252

Drain-source On Resistance-Max :

0.017 Ω

Additional Feature :

ULTRA LOW RESISTANCE

Surface Mount :

yes

FET Feature :

-

Reach Compliance Code :

Compliant

Vgs (Max) :

±20V

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

2V @ 80μA

Package :

Bulk

Product Status :

Active

DS Breakdown Voltage-Min :

55 V

Reference Standard :

AEC-Q101

Series :

OptiMOS?

Number of Terminals :

2

Factory Lead Time :

1 Week

Power Dissipation (Max) :

136W (Tc)

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

13mOhm @ 30A, 10V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

Operating Temperature :

-55°C ~ 175°C (TJ)

JESD-30 Code :

R-PSSO-G2

Avalanche Energy Rating (Eas) :

240 mJ

Case Connection :

DRAIN

Number of Elements :

1

FET Type :

N-Channel

Terminal Position :

Single

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Pulsed Drain Current-Max (IDM) :

200 A

Gate Charge (Qg) (Max) @ Vgs :

69 nC @ 10 V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

ECCN Code :

EAR99

Polarity/Channel Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Manufacturer :

Infineon Technologies AG

Current - Continuous Drain (Id) @ 25°C :

30A (Tc)

Supplier Device Package :

PG-TO252-3-11

Package Shape :

RECTANGULAR

Transistor Element Material :

SILICON