IPD30N06S2L-13

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Terminal Position :

Single

Gate Charge (Qg) (Max) @ Vgs :

69nC @ 10V

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

Additional Feature :

LOGIC LEVEL COMPATIBLE

Power Dissipation-Max :

136W Tc

Drain-source On Resistance-Max :

0.017Ohm

Series :

OptiMOS™

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

30A

Operating Temperature :

-55°C~175°C TJ

RoHS Status :

ROHS3 Compliant

Surface Mount :

yes

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

JESD-30 Code :

R-PSSO-G2

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Matte Tin (Sn)

FET Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

200A

Vgs(th) (Max) @ Id :

2V @ 80μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

4

Rds On (Max) @ Id, Vgs :

13m Ω @ 30A, 10V

ECCN Code :

EAR99

Configuration :

SINGLE WITH BUILT-IN DIODE

Input Capacitance (Ciss) (Max) @ Vds :

1800pF @ 25V

Vgs (Max) :

±20V

Case Connection :

DRAIN

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Qualification Status :

Not Qualified

Avalanche Energy Rating (Eas) :

240 mJ

Published :

2006

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Number of Elements :

1

JESD-609 Code :

e3

Number of Terminations :

2

Drain to Source Voltage (Vdss) :

55V

DS Breakdown Voltage-Min :

55V