IPB80P04P4L08ATMA2

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

5430 pF @ 25 V

Rise Time :

11 ns

Rds On (Max) @ Id, Vgs :

8.2mOhm @ 80A, 10V

Continuous Drain Current Id :

80

Qualification :

AEC-Q101

Product Type :

MOSFET

Supplier Device Package :

PG-TO263-3-2

Maximum Operating Temperature :

+ 175 C

Vgs(th) (Max) @ Id :

2.2V @ 120μA

Subcategory :

MOSFETs

Product Status :

Active

Operating Temperature :

-55°C ~ 175°C (TJ)

MSL :

MSL 1 - Unlimited

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Package :

Digi-Reel?

Mounting Type :

Surface Mount

Series :

OptiMOS?-P2

Power Dissipation (Max) :

75W (Tc)

Number of Channels :

1 Channel

Power Dissipation :

75

Manufacturer :

Infineon

Channel Mode :

Enhancement

Packaging :

Cut Tape

Gate Charge (Qg) (Max) @ Vgs :

92 nC @ 10 V

Channel Type :

P Channel

Minimum Operating Temperature :

- 55 C

Transistor Polarity :

P-Channel

RoHS :

Details

Product Category :

MOSFET

Mounting Style :

SMD/SMT

Current - Continuous Drain (Id) @ 25°C :

80A (Tc)

Brand :

Infineon Technologies

FET Feature :

-

Base Product Number :

IPB80P

Vgs (Max) :

+5V, -16V

Drain to Source Voltage (Vdss) :

40 V

FET Type :

P-Channel