IPB80N04S2H4ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

4V @ 250µA

Power Dissipation-Max :

300W Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Published :

2008

Vgs (Max) :

±20V

Drain Current-Max (Abs) (ID) :

80A

Operating Temperature :

-55°C~175°C TJ

Series :

OptiMOS™

Additional Feature :

AVALANCHE RATED

Surface Mount :

yes

JESD-30 Code :

R-PSSO-G2

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

40V

Pulsed Drain Current-Max (IDM) :

320A

Mounting Type :

Surface Mount

Avalanche Energy Rating (Eas) :

660 mJ

Number of Terminations :

2

DS Breakdown Voltage-Min :

40V

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

148nC @ 10V

Packaging :

Tape and Reel (TR)

Input Capacitance (Ciss) (Max) @ Vds :

4400pF @ 25V

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

Terminal Position :

Single

Drain-source On Resistance-Max :

0.0037Ohm

Rds On (Max) @ Id, Vgs :

3.7m Ω @ 80A, 10V

Terminal Form :

Gull wing

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Number of Elements :

1