IPB80N04S2H4ATMA2

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

40V

Rds On Max :

3.7 mΩ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Max Operating Temperature :

175°C

Continuous Drain Current (ID) :

80A

Contact Plating :

Tin

Terminal Form :

Gull wing

Turn-Off Delay Time :

46 ns

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Max Power Dissipation :

300W

Reach Compliance Code :

not_compliant

JESD-30 Code :

R-PSSO-G2

Fall Time (Typ) :

22 ns

Surface Mount :

yes

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

TO-263-3

Reference Standard :

AEC-Q101

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Factory Lead Time :

10 Weeks

Gate to Source Voltage (Vgs) :

20V

Number of Elements :

1

Avalanche Energy Rating (Eas) :

660 mJ

Min Operating Temperature :

-55°C

Input Capacitance :

4.4nF

Rise Time :

63ns

Published :

2008

Case Connection :

DRAIN

Halogen Free :

Halogen Free

RoHS Status :

ROHS3 Compliant

Polarity/Channel Type :

N-Channel

Number of Pins :

3

Turn On Delay Time :

23 ns

Packaging :

Tape and Reel (TR)

Power Dissipation :

300W

Number of Terminations :

2

Drain to Source Breakdown Voltage :

40V

Pbfree Code :

yes

Max Dual Supply Voltage :

40V

Element Configuration :

Single