IPB80N04S2H4ATMA2

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Polarity/Channel Type :

N-Channel

Reference Standard :

AEC-Q101

Input Capacitance :

4.4nF

JESD-609 Code :

e3

Case Connection :

DRAIN

Number of Elements :

1

Rds On Max :

3.7 mΩ

ECCN Code :

EAR99

Factory Lead Time :

10 Weeks

Max Dual Supply Voltage :

40V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Max Power Dissipation :

300W

Number of Pins :

3

Power Dissipation :

300W

Fall Time (Typ) :

22 ns

Operating Mode :

ENHANCEMENT MODE

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Surface Mount :

yes

Number of Terminations :

2

Drain to Source Voltage (Vdss) :

40V

Element Configuration :

Single

Gate to Source Voltage (Vgs) :

20V

Package / Case :

TO-263-3

Halogen Free :

Halogen Free

Reach Compliance Code :

not_compliant

JESD-30 Code :

R-PSSO-G2

Avalanche Energy Rating (Eas) :

660 mJ

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Pbfree Code :

yes

Drain to Source Breakdown Voltage :

40V

Turn-Off Delay Time :

46 ns

Published :

2008

Rise Time :

63ns

Max Operating Temperature :

175°C

Contact Plating :

Tin

Terminal Form :

Gull wing

Turn On Delay Time :

23 ns

Continuous Drain Current (ID) :

80A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Min Operating Temperature :

-55°C