IPB80N04S2H4ATMA2

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Max Power Dissipation :

300W

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Turn-Off Delay Time :

46 ns

Case Connection :

DRAIN

Contact Plating :

Tin

Published :

2008

Gate to Source Voltage (Vgs) :

20V

Max Dual Supply Voltage :

40V

Package / Case :

TO-263-3

Fall Time (Typ) :

22 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Max Operating Temperature :

175°C

Surface Mount :

yes

Rds On Max :

3.7 mΩ

Min Operating Temperature :

-55°C

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PSSO-G2

Drain to Source Voltage (Vdss) :

40V

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

2

Input Capacitance :

4.4nF

Factory Lead Time :

10 Weeks

ECCN Code :

EAR99

Element Configuration :

Single

Drain to Source Breakdown Voltage :

40V

Power Dissipation :

300W

Reach Compliance Code :

not_compliant

Halogen Free :

Halogen Free

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Avalanche Energy Rating (Eas) :

660 mJ

Packaging :

Tape and Reel (TR)

Continuous Drain Current (ID) :

80A

Pbfree Code :

yes

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Pins :

3

Turn On Delay Time :

23 ns

Terminal Form :

Gull wing

Rise Time :

63ns

Polarity/Channel Type :

N-Channel

Reference Standard :

AEC-Q101