IPB80N04S304ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Avalanche Energy Rating (Eas) :

290 mJ

Number of Terminations :

2

Terminal Finish :

Tin (Sn)

Drain to Source Voltage (Vdss) :

40V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

3.8m Ω @ 80A, 10V

Terminal Form :

Gull wing

Reach Compliance Code :

not_compliant

Packaging :

Tape and Reel (TR)

JESD-30 Code :

R-PSSO-G2

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Position :

Single

Power Dissipation-Max :

136W Tc

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

4V @ 90µA

DS Breakdown Voltage-Min :

40V

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~175°C TJ

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

JESD-609 Code :

e3

Published :

2007

Case Connection :

DRAIN

Drain-source On Resistance-Max :

0.0042Ohm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Surface Mount :

yes

Additional Feature :

ULTRA LOW RESISTANCE

HTS Code :

8541.29.00.95

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

80nC @ 10V

Series :

OptiMOS™

Pulsed Drain Current-Max (IDM) :

320A

Configuration :

SINGLE WITH BUILT-IN DIODE

Current - Continuous Drain (Id) @ 25°C :

80A Tc

ECCN Code :

EAR99

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

80A

Input Capacitance (Ciss) (Max) @ Vds :

5200pF @ 25V

RoHS Status :

ROHS3 Compliant