IPB80N04S2L03ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Element Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Additional Feature :

LOGIC LEVEL COMPATIBLE, AVALANCHE RATED

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

6000pF @ 25V

Packaging :

Tape and Reel (TR)

Case Connection :

DRAIN

RoHS Status :

RoHS Compliant

Published :

2006

Vgs (Max) :

±20V

Avalanche Energy Rating (Eas) :

810 mJ

Fall Time (Typ) :

27 ns

Gate to Source Voltage (Vgs) :

20V

Turn On Delay Time :

19 ns

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Halogen Free :

Halogen Free

Max Dual Supply Voltage :

40V

Rise Time :

50ns

Series :

OptiMOS™

Rds On (Max) @ Id, Vgs :

3.1m Ω @ 80A, 10V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Vgs(th) (Max) @ Id :

2V @ 250μA

Turn-Off Delay Time :

77 ns

ECCN Code :

EAR99

Continuous Drain Current (ID) :

80A

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Number of Terminations :

2

Gate Charge (Qg) (Max) @ Vgs :

213nC @ 10V

Drain to Source Breakdown Voltage :

40V

Terminal Form :

Gull wing

Power Dissipation-Max :

300W Tc

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

3

Power Dissipation :

300W

Operating Temperature :

-55°C~175°C TJ

Surface Mount :

yes

JESD-30 Code :

R-PSSO-G2

Current - Continuous Drain (Id) @ 25°C :

80A Tc