IPB80N03S4L02ATMA1
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- Mfr.Part #
- IPB80N03S4L02ATMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 80A TO263-3
- Stock
- 8,767
- In Stock ：
- 8,767
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn On Delay Time :
- 14 ns
- Halogen Free :
- Halogen Free
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- ECCN Code :
- EAR99
- Additional Feature :
- ULTRA LOW RESISTANCE
- Series :
- OptiMOS™
- Number of Elements :
- 1
- Number of Pins :
- 3
- RoHS Status :
- ROHS3 Compliant
- Terminal Finish :
- Tin (Sn)
- Fall Time (Typ) :
- 13 ns
- Power Dissipation-Max :
- 136W Tc
- Packaging :
- Tape and Reel (TR)
- Gate Charge (Qg) (Max) @ Vgs :
- 140nC @ 10V
- Max Dual Supply Voltage :
- 30V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Mount :
- Surface Mount
- Avalanche Energy Rating (Eas) :
- 260 mJ
- Gate to Source Voltage (Vgs) :
- 16V
- Number of Terminations :
- 2
- Reach Compliance Code :
- not_compliant
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Rise Time :
- 9ns
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Factory Lead Time :
- 16 Weeks
- FET Type :
- N-Channel
- Terminal Position :
- Single
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-30 Code :
- R-PSSO-G2
- Published :
- 2007
- Vgs (Max) :
- ±16V
- Drain-source On Resistance-Max :
- 0.0024Ohm
- Case Connection :
- DRAIN
- HTS Code :
- 8541.29.00.95
- Lead Free :
- Contains Lead
- Rds On (Max) @ Id, Vgs :
- 2.4m Ω @ 80A, 10V
- Vgs(th) (Max) @ Id :
- 2.2V @ 90μA
- Current - Continuous Drain (Id) @ 25°C :
- 80A Tc
- Turn-Off Delay Time :
- 62 ns
- Transistor Element Material :
- SILICON
- Input Capacitance (Ciss) (Max) @ Vds :
- 9750pF @ 25V
- Continuous Drain Current (ID) :
- 80A
- Operating Temperature :
- -55°C~175°C TJ
- Terminal Form :
- Gull wing
- JESD-609 Code :
- e3
- Operating Mode :
- ENHANCEMENT MODE
- Datasheets
- IPB80N03S4L02ATMA1
N-Channel Tape & Reel (TR) 2.4m Ω @ 80A, 10V ±16V 9750pF @ 25V 140nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPB80N03S4L02ATMA1 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 260 mJ.A device's maximum input capacitance is 9750pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 80A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 62 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 14 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 16V.Powered by 30V, it supports maximum dual supply voltages.This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.
IPB80N03S4L02ATMA1 Features
the avalanche energy rating (Eas) is 260 mJ
a continuous drain current (ID) of 80A
the turn-off delay time is 62 ns
IPB80N03S4L02ATMA1 Applications
There are a lot of Infineon Technologies
IPB80N03S4L02ATMA1 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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