IPB80N04S204ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

170nC @ 10V

Power Dissipation-Max :

300W Tc

Drain to Source Voltage (Vdss) :

40V

Additional Feature :

AVALANCHE RATED

Series :

OptiMOS™

JESD-30 Code :

R-PSSO-G2

Drain-source On Resistance-Max :

0.0034Ohm

Terminal Position :

Single

Operating Mode :

ENHANCEMENT MODE

Surface Mount :

yes

Number of Terminations :

2

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

SINGLE WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

3.4m Ω @ 80A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

5300pF @ 25V

Case Connection :

DRAIN

Published :

2006

Operating Temperature :

-55°C~175°C TJ

ECCN Code :

EAR99

Transistor Element Material :

SILICON

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pulsed Drain Current-Max (IDM) :

320A

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

DS Breakdown Voltage-Min :

40V

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

80A Tc

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

Vgs (Max) :

±20V

Avalanche Energy Rating (Eas) :

810 mJ

Packaging :

Tape and Reel (TR)

Drain Current-Max (Abs) (ID) :

80A

Vgs(th) (Max) @ Id :

4V @ 250µA