IPB80N04S303ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.0035Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

320A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Additional Feature :

ULTRA LOW RESISTANCE

Transistor Element Material :

SILICON

Terminal Position :

Single

Surface Mount :

yes

Vgs(th) (Max) @ Id :

4V @ 120µA

DS Breakdown Voltage-Min :

40V

Drain to Source Voltage (Vdss) :

40V

Factory Lead Time :

12 Weeks

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-30 Code :

R-PSSO-G2

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Temperature :

-55°C~175°C TJ

Series :

OptiMOS™

Case Connection :

DRAIN

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

HTS Code :

8541.29.00.95

Avalanche Energy Rating (Eas) :

526 mJ

Terminal Finish :

Tin (Sn)

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Rds On (Max) @ Id, Vgs :

3.2m Ω @ 80A, 10V

Vgs (Max) :

±20V

Published :

2007

Terminal Form :

Gull wing

Input Capacitance (Ciss) (Max) @ Vds :

7300pF @ 25V

JESD-609 Code :

e3

Number of Terminations :

2

Drain Current-Max (Abs) (ID) :

80A

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Configuration :

SINGLE WITH BUILT-IN DIODE

Reach Compliance Code :

not_compliant

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

188W Tc

FET Type :

N-Channel

Number of Elements :

1