IPB80N04S204ATMA2

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

810 mJ

Additional Feature :

AVALANCHE RATED

Factory Lead Time :

10 Weeks

Vgs(th) (Max) @ Id :

4V @ 250µA

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Turn On Delay Time :

26 ns

ECCN Code :

EAR99

Number of Pins :

3

Series :

OptiMOS™

Gate to Source Voltage (Vgs) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Single

Fall Time (Typ) :

32 ns

Pbfree Code :

yes

FET Type :

N-Channel

Mount :

Surface Mount

Terminal Finish :

Tin (Sn)

Halogen Free :

Halogen Free

Current - Continuous Drain (Id) @ 25°C :

80A Tc

JESD-30 Code :

R-PSSO-G2

Rise Time :

45ns

Turn-Off Delay Time :

56 ns

Packaging :

Tape and Reel (TR)

Case Connection :

DRAIN

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

170nC @ 10V

Number of Terminations :

2

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

300W Tc

Continuous Drain Current (ID) :

80A

Number of Elements :

1

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Radiation Hardening :

No

Max Dual Supply Voltage :

40V

Rds On (Max) @ Id, Vgs :

3.4m Ω @ 80A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

5300pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Published :

2006

Operating Temperature :

-55°C~175°C TJ

RoHS Status :

ROHS3 Compliant