IPB80N03S4L03ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Terminal Position :

Single

Number of Pins :

3

Series :

OptiMOS™

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Gate Charge (Qg) (Max) @ Vgs :

75nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Number of Elements :

1

Additional Feature :

ULTRA LOW RESISTANCE

Rds On (Max) @ Id, Vgs :

3.3m Ω @ 80A, 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Rise Time :

6ns

Terminal Finish :

Tin (Sn)

Max Dual Supply Voltage :

30V

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

5100pF @ 25V

Published :

2010

Lead Free :

Contains Lead

Vgs (Max) :

±16V

Avalanche Energy Rating (Eas) :

95 mJ

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Halogen Free :

Halogen Free

Mounting Type :

Surface Mount

Factory Lead Time :

14 Weeks

JESD-30 Code :

R-PSSO-G2

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

2.2V @ 45μA

Turn-Off Delay Time :

37 ns

RoHS Status :

ROHS3 Compliant

Surface Mount :

yes

Drain Current-Max (Abs) (ID) :

80A

JESD-609 Code :

e3

Number of Terminations :

2

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

Terminal Form :

Gull wing

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Operating Temperature :

-55°C~175°C TJ

Power Dissipation-Max :

94W Tc

Reach Compliance Code :

not_compliant