IPB80P04P4L08ATMA1
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- Mfr.Part #
- IPB80P04P4L08ATMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET P-CH 40V 80A TO263-3
- Stock
- 1,389
- In Stock ：
- 1,389
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Temperature :
- -55°C~175°C TJ
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Drain to Source Breakdown Voltage :
- -40V
- Max Dual Supply Voltage :
- -40V
- Gate Charge (Qg) (Max) @ Vgs :
- 92nC @ 10V
- Drain to Source Voltage (Vdss) :
- 40V
- Mounting Type :
- Surface Mount
- Fall Time (Typ) :
- 35 ns
- Lead Free :
- Contains Lead
- Width :
- 9.25mm
- Power Dissipation :
- 75W
- Current - Continuous Drain (Id) @ 25°C :
- 80A Tc
- Power Dissipation-Max :
- 75W Tc
- Rise Time :
- 11ns
- Rds On (Max) @ Id, Vgs :
- 7.9m Ω @ 80A, 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 5430pF @ 25V
- Terminal Finish :
- Tin (Sn)
- Halogen Free :
- Halogen Free
- Vgs (Max) :
- ±16V
- Mount :
- Surface Mount
- Number of Pins :
- 3
- Reach Compliance Code :
- not_compliant
- FET Type :
- P-Channel
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Turn-Off Delay Time :
- 42 ns
- Gate to Source Voltage (Vgs) :
- 16V
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tape and Reel (TR)
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Height :
- 4.4mm
- Series :
- Automotive, AEC-Q101, OptiMOS™
- Factory Lead Time :
- 14 Weeks
- Published :
- 2011
- Turn On Delay Time :
- 12 ns
- Continuous Drain Current (ID) :
- -80A
- JESD-609 Code :
- e3
- Length :
- 10mm
- Vgs(th) (Max) @ Id :
- 2.2V @ 120μA
- Element Configuration :
- Single
- Datasheets
- IPB80P04P4L08ATMA1
P-Channel Tape & Reel (TR) 7.9m Ω @ 80A, 10V ±16V 5430pF @ 25V 92nC @ 10V 40V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPB80P04P4L08ATMA1 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 5430pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is -80A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=-40V. And this device has -40V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 42 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 12 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 16V.Powered by -40V, it supports the maximal dual supply voltage.Operating this transistor requires a 40V drain to source voltage (Vdss).By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.
IPB80P04P4L08ATMA1 Features
a continuous drain current (ID) of -80A
a drain-to-source breakdown voltage of -40V voltage
the turn-off delay time is 42 ns
a 40V drain to source voltage (Vdss)
IPB80P04P4L08ATMA1 Applications
There are a lot of Infineon Technologies
IPB80P04P4L08ATMA1 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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