IPB80P04P4L06ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

88W Tc

Transistor Element Material :

SILICON

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Power Dissipation :

88W

Operating Temperature :

-55°C~175°C TJ

Published :

2011

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Length :

10mm

Terminal Form :

Gull wing

Reach Compliance Code :

not_compliant

Gate to Source Voltage (Vgs) :

16V

Factory Lead Time :

14 Weeks

Lead Free :

Contains Lead

Continuous Drain Current (ID) :

-80A

JESD-30 Code :

R-PSSO-G2

Fall Time (Typ) :

44 ns

Series :

Automotive, AEC-Q101, OptiMOS™

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Drain to Source Voltage (Vdss) :

40V

Height :

4.4mm

Max Dual Supply Voltage :

-40V

Element Configuration :

Single

Vgs(th) (Max) @ Id :

2.2V @ 150µA

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Additional Feature :

LOGIC LEVEL COMPATIBLE

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

2

Width :

9.25mm

Rise Time :

12ns

Halogen Free :

Halogen Free

Number of Pins :

3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

ECCN Code :

EAR99

Turn On Delay Time :

17 ns

Rds On (Max) @ Id, Vgs :

6.4m Ω @ 80A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

6580pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

104nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

61 ns

Terminal Finish :

Tin (Sn)

Drain-source On Resistance-Max :

0.0064Ohm

FET Type :

P-Channel

Drain to Source Breakdown Voltage :

-40V

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Mount :

Surface Mount

Vgs (Max) :

±16V