IPB80P04P4L04ATMA2

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Product Category :

MOSFET

Channel Mode :

Enhancement

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Number of Channels :

1 Channel

Operating Temperature :

-55°C ~ 175°C (TJ)

Product Status :

Active

Vgs (Max) :

+5V, -16V

Package :

Digi-Reel?

Base Product Number :

IPB80P

Rise Time :

13 ns

Rds On (Max) @ Id, Vgs :

4.7mOhm @ 80A, 10V

Packaging :

Cut Tape

Transistor Polarity :

P-Channel

Power Dissipation (Max) :

125W (Tc)

Subcategory :

MOSFETs

Minimum Operating Temperature :

- 55 C

Mounting Style :

SMD/SMT

Input Capacitance (Ciss) (Max) @ Vds :

11570 pF @ 25 V

Brand :

Infineon Technologies

Maximum Operating Temperature :

+ 175 C

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

Supplier Device Package :

PG-TO263-3-2

Current - Continuous Drain (Id) @ 25°C :

80A (Tc)

FET Type :

P-Channel

Series :

OptiMOS?-P2

Mounting Type :

Surface Mount

Manufacturer :

Infineon

Drain to Source Voltage (Vdss) :

40 V

Channel Type :

P Channel

RoHS :

Details

Continuous Drain Current Id :

80

Gate Charge (Qg) (Max) @ Vgs :

176 nC @ 10 V

MSL :

MSL 1 - Unlimited

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Product Type :

MOSFET

Qualification :

AEC-Q101

Power Dissipation :

125

FET Feature :

-