IPB80P04P4L04ATMA1

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Mfr.Part #
IPB80P04P4L04ATMA1
Manufacturer
Infineon Technologies
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET P-CH 40V 80A TO263-3
Stock
32,790
In Stock :
32,790

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Input Capacitance (Ciss) (Max) @ Vds :
3800pF @ 25V
Fall Time (Typ) :
65 ns
Drain to Source Breakdown Voltage :
-40V
FET Type :
P-Channel
Length :
10mm
JESD-609 Code :
e3
Additional Feature :
LOGIC LEVEL COMPATIBLE
Factory Lead Time :
14 Weeks
Transistor Element Material :
SILICON
Power Dissipation-Max :
125W Tc
Gate to Source Voltage (Vgs) :
16V
Case Connection :
DRAIN
Published :
2011
Avalanche Energy Rating (Eas) :
60 mJ
Max Dual Supply Voltage :
-40V
Radiation Hardening :
No
Vgs(th) (Max) @ Id :
2.2V @ 250µA
Terminal Finish :
Tin (Sn)
Series :
Automotive, AEC-Q101, OptiMOS™
Lead Free :
Contains Lead
Width :
9.25mm
Gate Charge (Qg) (Max) @ Vgs :
176nC @ 10V
Terminal Form :
Gull wing
Current - Continuous Drain (Id) @ 25°C :
80A Tc
Power Dissipation :
125W
Mount :
Surface Mount
RoHS Status :
ROHS3 Compliant
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Turn-Off Delay Time :
119 ns
Rise Time :
13ns
Operating Mode :
ENHANCEMENT MODE
Rds On (Max) @ Id, Vgs :
4.4m Ω @ 80A, 10V
JESD-30 Code :
R-PSSO-G2
Height :
4.4mm
Continuous Drain Current (ID) :
-80A
Number of Terminations :
2
Halogen Free :
Halogen Free
Operating Temperature :
-55°C~175°C TJ
Turn On Delay Time :
28 ns
Element Configuration :
Single
Packaging :
Tape and Reel (TR)
Number of Pins :
3
Mounting Type :
Surface Mount
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Elements :
1
Drain-source On Resistance-Max :
0.0071Ohm
Vgs (Max) :
±16V
ECCN Code :
EAR99
Drain to Source Voltage (Vdss) :
40V
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IPB80P04P4L04ATMA1 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Number of Terminations:2, Operating Temperature:-55°C~175°C TJ, Number of Pins:3, Mounting Type:Surface Mount, IPB80P04P4L04ATMA1 pinout, IPB80P04P4L04ATMA1 datasheet PDF, IPB80P04P4L04ATMA1 amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IPB80P04P4L04ATMA1 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IPB80P04P4L04ATMA1


P-Channel Tape & Reel (TR) 4.4m Ω @ 80A, 10V ±16V 3800pF @ 25V 176nC @ 10V 40V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IPB80P04P4L04ATMA1 Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 60 mJ.The maximum input capacitance of this device is 3800pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is -80A.When VGS=-40V, and ID flows to VDS at -40VVDS, the drain-source breakdown voltage is -40V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 119 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 28 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.With its -40V power supply, it is capable of handling a dual voltage maximum.The drain-to-source voltage (Vdss) of this transistor needs to be at 40V in order to operate.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.

IPB80P04P4L04ATMA1 Features


the avalanche energy rating (Eas) is 60 mJ
a continuous drain current (ID) of -80A
a drain-to-source breakdown voltage of -40V voltage
the turn-off delay time is 119 ns
a 40V drain to source voltage (Vdss)


IPB80P04P4L04ATMA1 Applications


There are a lot of Infineon Technologies
IPB80P04P4L04ATMA1 applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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