IPB80P04P407ATMA2

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Cut Tape

Product Status :

Active

Drive Voltage (Max Rds On, Min Rds On) :

10V

RoHS :

Details

Gate Charge (Qg) (Max) @ Vgs :

89 nC @ 10 V

Vgs (Max) :

±20V

Qualification :

AEC-Q101

Supplier Device Package :

PG-TO263-3-2

Mounting Type :

Surface Mount

Drain to Source Voltage (Vdss) :

40 V

Product Category :

MOSFET

Series :

OptiMOS?

Base Product Number :

IPB80P

Rds On (Max) @ Id, Vgs :

7.4mOhm @ 80A, 10V

Rise Time :

15 ns

Channel Type :

P

Operating Temperature :

-55°C ~ 175°C (TJ)

FET Type :

P-Channel

FET Feature :

-

Number of Channels :

1 Channel

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Channel Mode :

Enhancement

Vgs(th) (Max) @ Id :

4V @ 150μA

Current - Continuous Drain (Id) @ 25°C :

80A (Tc)

Continuous Drain Current Id :

80

Package :

Digi-Reel?

Minimum Operating Temperature :

- 55 C

Product Type :

MOSFET

Brand :

Infineon Technologies

Transistor Polarity :

P-Channel

Power Dissipation (Max) :

88W (Tc)

Subcategory :

MOSFETs

Mounting Style :

SMD/SMT

Input Capacitance (Ciss) (Max) @ Vds :

6085 pF @ 25 V

Manufacturer :

Infineon

Power Dissipation :

88

Maximum Operating Temperature :

+ 175 C