IPB80P04P407ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

6085pF @ 25V

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

Number of Pins :

3

Mounting Type :

Surface Mount

Halogen Free :

Halogen Free

Drain-source On Resistance-Max :

0.0077Ohm

Mount :

Surface Mount

Max Dual Supply Voltage :

-40V

Terminal Finish :

Tin (Sn)

Weight :

1.946308g

Number of Elements :

1

Power Dissipation :

88W

JESD-609 Code :

e3

Rise Time :

15ns

Number of Terminations :

2

Turn On Delay Time :

25 ns

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

80A

Vgs(th) (Max) @ Id :

4V @ 150μA

Height :

4.4mm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Lead Free :

Contains Lead

Gate to Source Voltage (Vgs) :

20V

Vgs (Max) :

±20V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Channels :

1

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

7.4m Ω @ 80A, 10V

Fall Time (Typ) :

41 ns

Gate Charge (Qg) (Max) @ Vgs :

89nC @ 10V

Length :

10mm

Packaging :

Tape and Reel (TR)

Element Configuration :

Single

JESD-30 Code :

R-PSSO-G2

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~175°C TJ

Factory Lead Time :

14 Weeks

Series :

Automotive, AEC-Q101, OptiMOS™

Width :

9.25mm

Power Dissipation-Max :

88W Tc

Reach Compliance Code :

not_compliant

Case Connection :

DRAIN

Published :

2011

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn-Off Delay Time :

34 ns

Drain to Source Voltage (Vdss) :

40V

FET Type :

P-Channel