IPB80P04P405ATMA2

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Subcategory :

MOSFETs

Supplier Device Package :

PG-TO263-3-2

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Channel Mode :

Enhancement

Product Status :

Active

Rds On (Max) @ Id, Vgs :

5.2mOhm @ 80A, 10V

Power Dissipation (Max) :

125W (Tc)

Rise Time :

24 ns

Product Category :

MOSFET

Product Type :

MOSFET

Mounting Style :

SMD/SMT

Packaging :

Cut Tape

Power Dissipation :

125W

Number of Channels :

1 Channel

Operating Temperature :

-55°C ~ 175°C (TJ)

Channel Type :

P Channel

Qualification :

AEC-Q101

Mounting Type :

Surface Mount

Manufacturer :

Infineon

Transistor Polarity :

P-Channel

RoHS :

Details

Continuous Drain Current Id :

80A

Base Product Number :

IPB80P

Input Capacitance (Ciss) (Max) @ Vds :

10300 pF @ 25 V

FET Feature :

-

MSL :

MSL 1 - Unlimited

Gate Charge (Qg) (Max) @ Vgs :

151 nC @ 10 V

Vgs (Max) :

±20V

Brand :

Infineon Technologies

Current - Continuous Drain (Id) @ 25°C :

80A (Tc)

Vgs(th) (Max) @ Id :

4V @ 250µA

Maximum Operating Temperature :

+ 175 C

FET Type :

P-Channel

Package :

Digi-Reel?

Series :

Automotive, AEC-Q101, OptiMOS?-P2

Drain to Source Voltage (Vdss) :

40 V

Minimum Operating Temperature :

- 55 C