IPB80P04P405ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Lead Free :

Contains Lead

JESD-609 Code :

e3

Published :

2011

Turn-Off Delay Time :

73 ns

Power Dissipation-Max :

125W Tc

Avalanche Energy Rating (Eas) :

64 mJ

Terminal Form :

Gull wing

Number of Elements :

1

Series :

Automotive, AEC-Q101, OptiMOS™

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

40V

Number of Pins :

3

Power Dissipation :

125W

Transistor Element Material :

SILICON

Fall Time (Typ) :

65 ns

Drain-source On Resistance-Max :

0.0049Ohm

Rise Time :

24ns

Gate Charge (Qg) (Max) @ Vgs :

151nC @ 10V

Halogen Free :

Halogen Free

Terminal Finish :

Tin (Sn)

Width :

9.25mm

Turn On Delay Time :

42 ns

Reach Compliance Code :

not_compliant

JESD-30 Code :

R-PSSO-G2

Gate to Source Voltage (Vgs) :

20V

Mount :

Surface Mount

Factory Lead Time :

14 Weeks

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

10300pF @ 25V

Operating Temperature :

-55°C~175°C TJ

Continuous Drain Current (ID) :

80A

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Height :

4.4mm

ECCN Code :

EAR99

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

4.9m Ω @ 80A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

2

FET Type :

P-Channel

Element Configuration :

Single

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Max Dual Supply Voltage :

-40V

Drain to Source Breakdown Voltage :

-40V

RoHS Status :

ROHS3 Compliant

Length :

10mm

Vgs(th) (Max) @ Id :

4V @ 250µA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED