IPB80P03P4L07ATMA2

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS :

Details

Brand :

Infineon Technologies

Power Dissipation (Max) :

88W (Tc)

Technology :

Si

Maximum Operating Temperature :

+ 175 C

Rise Time :

4 ns

Base Product Number :

IPB80P

Product Status :

Active

Product Category :

MOSFET

Supplier Device Package :

PG-TO263-3-2

Mounting Type :

Surface Mount

Qualification :

AEC-Q101

Gate Charge (Qg) (Max) @ Vgs :

80 nC @ 10 V

Operating Temperature :

-55°C ~ 175°C (TJ)

Number of Channels :

1 Channel

Packaging :

Tape and Reel

FET Type :

P-Channel

Vgs (Max) :

+5V, -16V

Rad Hardened :

No

Continuous Drain Current Id :

80A

Mounting Style :

SMD/SMT

Channel Type :

P Channel

Product Type :

MOSFET

Package / Case :

TO-263-3-2

Power Dissipation :

88W

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

Rds On (Max) @ Id, Vgs :

6.9mOhm @ 80A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

5700 pF @ 25 V

FET Feature :

-

Current - Continuous Drain (Id) @ 25°C :

80A (Tc)

Vgs(th) (Max) @ Id :

2V @ 130µA

Subcategory :

MOSFETs

Transistor Polarity :

P-Channel

Drain to Source Voltage (Vdss) :

30 V

Channel Mode :

Enhancement

Manufacturer :

Infineon

Minimum Operating Temperature :

- 55 C