IPB80P03P4L07ATMA1
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- Mfr.Part #
- IPB80P03P4L07ATMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET P-CH 30V 80A TO263-3
- Stock
- 1,939
- In Stock ：
- 1,939
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn-Off Delay Time :
- 15 ns
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Lead Free :
- Contains Lead
- JESD-30 Code :
- R-PSSO-G2
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- Number of Terminations :
- 2
- Rise Time :
- 4ns
- Terminal Form :
- Gull wing
- Vgs(th) (Max) @ Id :
- 2V @ 130µA
- Operating Mode :
- ENHANCEMENT MODE
- Drain to Source Voltage (Vdss) :
- 30V
- Vgs (Max) :
- +5V, -16V
- Gate to Source Voltage (Vgs) :
- 5V
- Packaging :
- Tape and Reel (TR)
- Published :
- 2008
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Turn On Delay Time :
- 8 ns
- Continuous Drain Current (ID) :
- 80A
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Series :
- OptiMOS™
- Rds On (Max) @ Id, Vgs :
- 6.9m Ω @ 80A, 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 5700pF @ 25V
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- FET Type :
- P-Channel
- Max Dual Supply Voltage :
- -30V
- Transistor Application :
- SWITCHING
- Halogen Free :
- Halogen Free
- Case Connection :
- DRAIN
- Power Dissipation-Max :
- 88W Tc
- Factory Lead Time :
- 14 Weeks
- Operating Temperature :
- -55°C~175°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain-source On Resistance-Max :
- 0.0069Ohm
- Gate Charge (Qg) (Max) @ Vgs :
- 80nC @ 10V
- Transistor Element Material :
- SILICON
- Mount :
- Surface Mount
- Number of Pins :
- 3
- Mounting Type :
- Surface Mount
- Terminal Position :
- Single
- Fall Time (Typ) :
- 60 ns
- Current - Continuous Drain (Id) @ 25°C :
- 80A Tc
- ECCN Code :
- EAR99
- Datasheets
- IPB80P03P4L07ATMA1
P-Channel Tape & Reel (TR) 6.9m Ω @ 80A, 10V +5V, -16V 5700pF @ 25V 80nC @ 10V 30V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPB80P03P4L07ATMA1 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 5700pF @ 25V.This device conducts a continuous drain current (ID) of 80A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 15 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 8 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 5V.With -30V power, it supports a dual voltage supply of up to maximum.This transistor requires a drain-source voltage (Vdss) of 30V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).
IPB80P03P4L07ATMA1 Features
a continuous drain current (ID) of 80A
the turn-off delay time is 15 ns
a 30V drain to source voltage (Vdss)
IPB80P03P4L07ATMA1 Applications
There are a lot of Infineon Technologies
IPB80P03P4L07ATMA1 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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