IPB80P03P4L04ATMA2

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Brand :

Infineon Technologies

Product Status :

Active

Packaging :

Cut Tape

Power Dissipation :

137W

Channel Type :

P

Continuous Drain Current Id :

80A

Product Category :

MOSFET

Number of Channels :

1 Channel

Series :

Automotive, AEC-Q101, OptiMOS?-P2

Gate Charge (Qg) (Max) @ Vgs :

160 nC @ 10 V

Qualification :

AEC-Q101

Package Type :

D2PAK (TO-263)

Rds On (Max) @ Id, Vgs :

4.4mOhm @ 80A, 10V

Mounting Style :

SMD/SMT

Rise Time :

11 ns

Channel Mode :

Enhancement

Vgs (Max) :

+5V, -16V

Base Product Number :

IPB80P

MSL :

MSL 1 - Unlimited

RoHS :

Details

Product Type :

MOSFET

Operating Temperature :

-55°C ~ 175°C (TJ)

FET Feature :

-

FET Type :

P-Channel

Input Capacitance (Ciss) (Max) @ Vds :

11300 pF @ 25 V

Minimum Operating Temperature :

- 55 C

Drain to Source Voltage (Vdss) :

30 V

Power Dissipation (Max) :

137W (Tc)

Package :

Digi-Reel?

Mounting Type :

Surface Mount

Number of Elements per Chip :

1

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Subcategory :

MOSFETs

Manufacturer :

Infineon

Transistor Polarity :

P-Channel

Pin Count :

3

Current - Continuous Drain (Id) @ 25°C :

80A (Tc)

Supplier Device Package :

PG-TO263-3-2

Maximum Operating Temperature :

+ 175 C

Vgs(th) (Max) @ Id :

2V @ 253μA