IPB80P03P4L04ATMA1

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Mfr.Part #
IPB80P03P4L04ATMA1
Manufacturer
Infineon Technologies
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET P-CH 30V 80A TO263-3
Stock
2,573
In Stock :
2,573

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
JESD-30 Code :
R-PSSO-G2
FET Type :
P-Channel
Packaging :
Tape and Reel (TR)
Operating Mode :
ENHANCEMENT MODE
Gate to Source Voltage (Vgs) :
5V
Gate Charge (Qg) (Max) @ Vgs :
160nC @ 10V
Vgs(th) (Max) @ Id :
2V @ 253μA
Power Dissipation-Max :
137W Tc
Vgs (Max) :
+5V, -16V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Avalanche Energy Rating (Eas) :
410 mJ
Max Dual Supply Voltage :
-30V
Drain to Source Voltage (Vdss) :
30V
Rise Time :
11ns
Number of Elements :
1
Drain-source On Resistance-Max :
0.007Ohm
Fall Time (Typ) :
40 ns
Halogen Free :
Halogen Free
Current - Continuous Drain (Id) @ 25°C :
80A Tc
Lead Free :
Contains Lead
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
JESD-609 Code :
e3
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Terminal Position :
Single
Series :
OptiMOS™
Transistor Element Material :
SILICON
Number of Terminations :
2
Configuration :
SINGLE WITH BUILT-IN DIODE
Continuous Drain Current (ID) :
80A
Reach Compliance Code :
not_compliant
RoHS Status :
ROHS3 Compliant
Published :
2008
ECCN Code :
EAR99
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Pins :
3
Turn-Off Delay Time :
140 ns
Factory Lead Time :
14 Weeks
Mount :
Surface Mount
Terminal Finish :
Tin (Sn)
Mounting Type :
Surface Mount
Turn On Delay Time :
17 ns
Input Capacitance (Ciss) (Max) @ Vds :
11300pF @ 25V
Operating Temperature :
-55°C~175°C TJ
Additional Feature :
LOGIC LEVEL COMPATIBLE
Case Connection :
DRAIN
Terminal Form :
Gull wing
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Rds On (Max) @ Id, Vgs :
4.1m Ω @ 80A, 10V
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IPB80P03P4L04ATMA1 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Number of Terminations:2, Number of Pins:3, Mounting Type:Surface Mount, Operating Temperature:-55°C~175°C TJ, IPB80P03P4L04ATMA1 pinout, IPB80P03P4L04ATMA1 datasheet PDF, IPB80P03P4L04ATMA1 amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IPB80P03P4L04ATMA1 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IPB80P03P4L04ATMA1


P-Channel Tape & Reel (TR) 4.1m Ω @ 80A, 10V +5V, -16V 11300pF @ 25V 160nC @ 10V 30V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IPB80P03P4L04ATMA1 Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 410 mJ.The maximum input capacitance of this device is 11300pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 80A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 140 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 17 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.With its -30V power supply, it is capable of handling a dual voltage maximum.The drain-to-source voltage (Vdss) of this transistor needs to be at 30V in order to operate.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.

IPB80P03P4L04ATMA1 Features


the avalanche energy rating (Eas) is 410 mJ
a continuous drain current (ID) of 80A
the turn-off delay time is 140 ns
a 30V drain to source voltage (Vdss)


IPB80P03P4L04ATMA1 Applications


There are a lot of Infineon Technologies
IPB80P03P4L04ATMA1 applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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